Home / Single FETs, MOSFETs / FQPF7N65CYDTU

FQPF7N65CYDTU

Fairchild Semiconductor

Product No:

FQPF7N65CYDTU

Manufacturer:

Fairchild Semiconductor

Package:

TO-220F-3 (Y-Forming)

Batch:

Datasheet:

Description:

POWER FIELD-EFFECT TRANSISTOR, N

Quantity:

Delivery:

Payment:

In Stock : 772

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

366

$0.779

$285.114

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for FQPF7N65CYDTU, please feel free to contact us. To facilitate the processing of your inquiry, kindly include FQPF7N65CYDTU and the required quantity in your RFQ. IICSEMI provides the latest quote for FQPF7N65CYDTU without requiring registration. Latest information on FQPF7N65CYDTU: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs FQPF7N65CYDTU latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1245 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	36 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1.4Ohm @ 3.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220F-3 (Y-Forming)
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	52W (Tc)
Series	QFET®
Package / Case	TO-220-3 Full Pack, Formed Leads
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	7A (Tc)
Mfr	Fairchild Semiconductor
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk