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FQT1N60CTF-WS

onsemi

Product No:

FQT1N60CTF-WS

Manufacturer:

onsemi

Package:

SOT-223-4

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 600V 200MA SOT223-4

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 6.2 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 11.5Ohm @ 100mA, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package SOT-223-4
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 2.1W (Tc)
Series QFET®
Package / Case TO-261-4, TO-261AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 200mA (Tc)
Mfr onsemi
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number FQT1N60

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