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FQT1N80TF-WS

onsemi

Product No:

FQT1N80TF-WS

Manufacturer:

onsemi

Package:

SOT-223-3

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 800V 200MA SOT223-3

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 7.2 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 20Ohm @ 100mA, 10V
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Supplier Device Package SOT-223-3
Drain to Source Voltage (Vdss) 800 V
Power Dissipation (Max) 2.1W (Tc)
Series QFET®
Package / Case TO-261-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 200mA (Tc)
Mfr onsemi
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number FQT1N80

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