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FQT4N20LTF

Fairchild Semiconductor

Product No:

FQT4N20LTF

Package:

SOT-223-4

Batch:

-

Datasheet:

-

Description:

POWER FIELD-EFFECT TRANSISTOR, 0

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 310 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 5.2 nC @ 5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.35Ohm @ 425mA, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250µA
Supplier Device Package SOT-223-4
Drain to Source Voltage (Vdss) 200 V
Power Dissipation (Max) 2.2W (Tc)
Series QFET®
Package / Case TO-261-4, TO-261AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 850mA (Tc)
Mfr Fairchild Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Package Bulk

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