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FQU13N06LTU

Fairchild Semiconductor

Product No:

FQU13N06LTU

Package:

I-PAK

Batch:

-

Datasheet:

-

Description:

POWER FIELD-EFFECT TRANSISTOR, 1

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 6.4 nC @ 5 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 115mOhm @ 5.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package I-PAK
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 2.5W (Ta), 28W (Tc)
Series QFET®
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Mfr Fairchild Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Package Bulk

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