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G4S06510QT

Global Power Technology-GPT

Product No:

G4S06510QT

Package:

4-DFN (8x8)

Batch:

-

Datasheet:

pdf.png

Description:

DIODE SIL CARB 650V 44.9A 4DFN

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Capacitance @ Vr, F 550pF @ 0V, 1MHz
Mounting Type Surface Mount
Product Status Active
Supplier Device Package 4-DFN (8x8)
Current - Reverse Leakage @ Vr 50 µA @ 650 V
Series -
Package / Case 4-PowerTSFN
Technology SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A
Mfr Global Power Technology-GPT
Voltage - DC Reverse (Vr) (Max) 650 V
Package Cut Tape (CT)
Current - Average Rectified (Io) 44.9A
Operating Temperature - Junction -55°C ~ 175°C

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