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G5S6504Z

Global Power Technology-GPT

Product No:

G5S6504Z

Manufacturer:

Global Power Technology-GPT

Package:

8-DFN (4.9x5.75)

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Datasheet:

Description:

DIODE SIL CARB 650V 15.45A 8DFN

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Product Information

Parameter Info

User Guide

Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Capacitance @ Vr, F	181pF @ 0V, 1MHz
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	8-DFN (4.9x5.75)
Current - Reverse Leakage @ Vr	50 µA @ 650 V
Series	-
Package / Case	8-PowerTDFN
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.6 V @ 4 A
Mfr	Global Power Technology-GPT
Voltage - DC Reverse (Vr) (Max)	650 V
Package	Cut Tape (CT)
Current - Average Rectified (Io)	15.45A
Operating Temperature - Junction	-55°C ~ 175°C