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GAN3R2-100CBEAZ

Nexperia USA Inc.

Product No:

GAN3R2-100CBEAZ

Manufacturer:

Nexperia USA Inc.

Package:

8-WLCSP (3.5x2.13)

Batch:

-

Datasheet:

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Description:

100 V, 3.2 MOHM GALLIUM NITRIDE

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 1379

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $5.0825

    $5.0825

  • 10

    $4.2693

    $42.693

  • 100

    $3.4542

    $345.42

  • 500

    $3.0704

    $1535.2

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3.2mOhm @ 25A, 5V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 9mA
Supplier Device Package 8-WLCSP (3.5x2.13)
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 394W
Series -
Package / Case 8-XFBGA, WLCSP
Technology GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C 60A
Mfr Nexperia USA Inc.
Vgs (Max) +6V, -4V
Drive Voltage (Max Rds On, Min Rds On) 5V
Package Tape & Reel (TR)
Base Product Number GAN3R2

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