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GAP05SLT80-220

GeneSiC Semiconductor

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GAP05SLT80-220

Manufacturer:

GeneSiC Semiconductor

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Description:

DIODE SCHOTTKY 8KV 50MA AXIAL

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Parameter Info

User Guide

Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Capacitance @ Vr, F	25pF @ 1V, 1MHz
Mounting Type	Through Hole
Product Status	Obsolete
Supplier Device Package	-
Current - Reverse Leakage @ Vr	3.8 µA @ 8000 V
Series	-
Package / Case	Axial
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	4.6 V @ 50 mA
Mfr	GeneSiC Semiconductor
Voltage - DC Reverse (Vr) (Max)	8000 V
Package	Tube
Current - Average Rectified (Io)	50mA
Operating Temperature - Junction	-55°C ~ 175°C