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HGT1S10N120BNS

onsemi

Product No:

HGT1S10N120BNS

Manufacturer:

onsemi

Package:

D²PAK (TO-263)

Batch:

-

Datasheet:

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Description:

IGBT 1200V 35A 298W TO263AB

Quantity:

Delivery:

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Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
Input Type Standard
Test Condition 960V, 10A, 10Ohm, 15V
Switching Energy 320µJ (on), 800µJ (off)
Current - Collector (Ic) (Max) 35 A
Mounting Type Surface Mount
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 1200 V
Td (on/off) @ 25°C 23ns/165ns
Supplier Device Package D²PAK (TO-263)
Current - Collector Pulsed (Icm) 80 A
Series -
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge 100 nC
Power - Max 298 W
Mfr onsemi
Package Tube
IGBT Type NPT
Base Product Number HGT1S10

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