Home / Single FETs, MOSFETs / IAUZ30N08S5N186ATMA1

IAUZ30N08S5N186ATMA1

Infineon Technologies

Product No:

Manufacturer:

Infineon Technologies

Package:

PG-TSDSON-8-32

Batch:

Datasheet:

Description:

MOSFET_(75V 120V( PG-TSDSON-8

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IAUZ30N08S5N186ATMA1, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IAUZ30N08S5N186ATMA1 and the required quantity in your RFQ. IICSEMI provides the latest quote for IAUZ30N08S5N186ATMA1 without requiring registration. Latest information on IAUZ30N08S5N186ATMA1: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IAUZ30N08S5N186ATMA1 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	759 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs	12.1 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	18.6mOhm @ 15A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.8V @ 13µA
Supplier Device Package	PG-TSDSON-8-32
Drain to Source Voltage (Vdss)	80 V
Power Dissipation (Max)	41W (Tc)
Series	OptiMOS™
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	30A (Tj)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)