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IDC51D120T6MX1SA3

Infineon Technologies

Product No:

IDC51D120T6MX1SA3

Manufacturer:

Infineon Technologies

Package:

Sawn on foil

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Datasheet:

Description:

DIODE GP 1.2KV 100A WAFER

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IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IDC51D120T6MX1SA3, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IDC51D120T6MX1SA3 and the required quantity in your RFQ. IICSEMI provides the latest quote for IDC51D120T6MX1SA3 without requiring registration. Latest information on IDC51D120T6MX1SA3: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IDC51D120T6MX1SA3 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

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Speed	Standard Recovery >500ns, > 200mA (Io)
Capacitance @ Vr, F	-
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	Sawn on foil
Current - Reverse Leakage @ Vr	18 µA @ 1200 V
Series	-
Package / Case	Die
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	2.05 V @ 100 A
Mfr	Infineon Technologies
Voltage - DC Reverse (Vr) (Max)	1200 V
Package	Bulk
Current - Average Rectified (Io)	100A
Operating Temperature - Junction	-40°C ~ 175°C
Base Product Number	IDC51D120