Home / Single FETs, MOSFETs / IMBF170R1K0M1XTMA1

IMBF170R1K0M1XTMA1

Infineon Technologies

Product No:

IMBF170R1K0M1XTMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-7-13

Batch:

Datasheet:

Description:

SICFET N-CH 1700V 5.2A TO263-7

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IMBF170R1K0M1XTMA1, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IMBF170R1K0M1XTMA1 and the required quantity in your RFQ. IICSEMI provides the latest quote for IMBF170R1K0M1XTMA1 without requiring registration. Latest information on IMBF170R1K0M1XTMA1: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IMBF170R1K0M1XTMA1 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	275 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs	5 nC @ 12 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1000mOhm @ 1A, 15V
Product Status	Active
Vgs(th) (Max) @ Id	5.7V @ 1.1mA
Supplier Device Package	PG-TO263-7-13
Drain to Source Voltage (Vdss)	1700 V
Power Dissipation (Max)	68W (Tc)
Series	CoolSiC™
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	5.2A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	+20V, -10V
Drive Voltage (Max Rds On, Min Rds On)	12V, 15V
Package	Tape & Reel (TR)
Base Product Number	IMBF170