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IMW120R007M1HXKSA1

Infineon Technologies

Product No:

IMW120R007M1HXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO247-3

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SIC DISCRETE

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IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IMW120R007M1HXKSA1, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IMW120R007M1HXKSA1 and the required quantity in your RFQ. IICSEMI provides the latest quote for IMW120R007M1HXKSA1 without requiring registration. Latest information on IMW120R007M1HXKSA1: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IMW120R007M1HXKSA1 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	9170 nF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	220 nC @ 18 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	9.9mOhm @ 108A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	5.2V @ 47mA
Supplier Device Package	PG-TO247-3
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	750W (Tc)
Series	CoolSiC™
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	225A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	+20V, -5V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Package	Tube