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IMW120R090M1HXKSA1

Infineon Technologies

Product No:

IMW120R090M1HXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO247-3-41

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Description:

SICFET N-CH 1.2KV 26A TO247-3

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	707 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 18 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	117mOhm @ 8.5A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	5.7V @ 3.7mA
Supplier Device Package	PG-TO247-3-41
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	115W (Tc)
Series	CoolSiC™
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	26A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	+23V, -7V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Package	Tube
Base Product Number	IMW120