Home / Single FETs, MOSFETs / IMYH200R050M1HXKSA1

IMYH200R050M1HXKSA1

Infineon Technologies

Product No:

IMYH200R050M1HXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO247-4-U04

Batch:

Datasheet:

Description:

SIC DISCRETE

Quantity:

Delivery:

Payment:

In Stock : 128

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$49.7135

$49.7135
10

$44.2947

$442.947
100

$38.87913

$3887.913

Not the price you want? Send RFQ Now and we'll contact you ASAP.

GOOD,as a globally renowned distributor of electronic components, sells a wide range of electronic components from the world's top brand manufacturers, ensuring that all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications, configurations, prices, supply cycles and payment terms of IMYH200R050M1HXKSA1, please feel free to contact us at any time. To facilitate the processing of your inquiry, please include IMYH200R050M1HXKSA1 and the required quantity in the RFQ. GOOD can get the latest quotations of IMYH200R050M1HXKSA1 without registration. IMYH200R050M1HXKSA1 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	82 nC @ 18 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	64mOhm @ 20A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	5.5V @ 12.1mA
Supplier Device Package	PG-TO247-4-U04
Drain to Source Voltage (Vdss)	2000 V
Power Dissipation (Max)	348W (Tc)
Series	CoolSiC™
Package / Case	TO-247-4
Technology	SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C	48A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	+20V, -7V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Package	Tube
Base Product Number	IMYH200