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IMYH200R075M1HXKSA1

Infineon Technologies

Product No:

IMYH200R075M1HXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO247-4-U04

Batch:

Datasheet:

Description:

SIC DISCRETE

Quantity:

Delivery:

Payment:

In Stock : 109

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$35.2355

$35.2355
10

$31.3937

$313.937
100

$27.555605

$2755.5605

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	64 nC @ 18 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	98mOhm @ 13A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	5.5V @ 7.7mA
Supplier Device Package	PG-TO247-4-U04
Drain to Source Voltage (Vdss)	2000 V
Power Dissipation (Max)	267W (Tc)
Series	CoolSiC™
Package / Case	TO-247-4
Technology	SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C	34A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	+20V, -7V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Package	Tube
Base Product Number	IMYH200