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IMZA65R027M1HXKSA1

Infineon Technologies

Product No:

IMZA65R027M1HXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO247-4-3

Batch:

-

Datasheet:

-

Description:

MOSFET 650V NCH SIC TRENCH

Quantity:

Delivery:

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In Stock : 608

Minimum: 1 Multiples: 1

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Unit Price

Ext Price

  • 1

    $22.9995

    $22.9995

  • 10

    $20.43355

    $204.3355

  • 100

    $17.871875

    $1787.1875

  • 500

    $15.250673

    $7625.3365

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2131 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 18 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 34mOhm @ 38.3A, 18V
Product Status Active
Vgs(th) (Max) @ Id 5.7V @ 11mA
Supplier Device Package PG-TO247-4-3
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 189W (Tc)
Series CoolSiC™
Package / Case TO-247-4
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 59A (Tc)
Mfr Infineon Technologies
Vgs (Max) +23V, -5V
Drive Voltage (Max Rds On, Min Rds On) 18V
Package Tube
Base Product Number IMZA65

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