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IPAN60R280P7SXKSA1

Infineon Technologies

Product No:

IPAN60R280P7SXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220 Full Pack

Batch:

Datasheet:

Description:

MOSFET N-CH 650V 12A TO220

Quantity:

Delivery:

Payment:

In Stock : 470

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.444

$1.444
10

$1.19795

$11.9795
100

$0.953515

$95.3515
500

$0.806778

$403.389
1000

$0.684542

$684.542
2000

$0.650322

$1300.644
5000

$0.62587

$3129.35
10000

$0.60515

$6051.5

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Product Information

Parameter Info

User Guide

Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	761 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	280mOhm @ 3.8A, 10V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	4V @ 190µA
Supplier Device Package	PG-TO220 Full Pack
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	24W (Tc)
Series	CoolMOS™ P7
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPAN60