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IPB015N04NGATMA1

Infineon Technologies

Product No:

IPB015N04NGATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Batch:

Datasheet:

Description:

MOSFET N-CH 40V 120A D2PAK

Quantity:

Delivery:

Payment:

In Stock : 172

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$3.933

$3.933
10

$3.5359

$35.359
100

$2.89712

$289.712
500

$2.466238

$1233.119

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	20000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	250 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.5mOhm @ 100A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 200µA
Supplier Device Package	PG-TO263-3
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	250W (Tc)
Series	OptiMOS™
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IPB015