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IPB015N06NF2SATMA1

Infineon Technologies

Product No:

IPB015N06NF2SATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Batch:

-

Datasheet:

-

Description:

TRENCH 40<-<100V

Quantity:

Delivery:

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In Stock : 794

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.4605

    $2.4605

  • 10

    $2.03965

    $20.3965

  • 100

    $1.623265

    $162.3265

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 10500 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 233 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.5mOhm @ 100A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.3V @ 186µA
Supplier Device Package PG-TO263-3
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 3.8W (Ta), 250W (Tc)
Series StrongIRFET™2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 37A (Ta), 195A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number IPB015

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