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IPB020N08N5ATMA1

Infineon Technologies

Product No:

IPB020N08N5ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Batch:

Datasheet:

Description:

MOSFET N-CH 80V 120A D2PAK

Quantity:

Delivery:

Payment:

In Stock : 6433

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$4.921

$4.921
10

$4.4156

$44.156
100

$3.61779

$361.779
500

$3.079786

$1539.893

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	12100 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs	166 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2mOhm @ 100A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.8V @ 208µA
Supplier Device Package	PG-TO263-3
Drain to Source Voltage (Vdss)	80 V
Power Dissipation (Max)	300W (Tc)
Series	OptiMOS™
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	IPB020