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IPB031NE7N3 G

Infineon Technologies

Product No:

IPB031NE7N3 G

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

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Datasheet:

Description:

N-CHANNEL POWER MOSFET

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	8130 pF @ 37.5 V
Gate Charge (Qg) (Max) @ Vgs	117 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3.1mOhm @ 100A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.8V @ 155µA
Supplier Device Package	PG-TO263-3-2
Drain to Source Voltage (Vdss)	75 V
Power Dissipation (Max)	214W (Tc)
Series	OptiMOS™ 3
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk