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IPB03N03LAG

Infineon Technologies

Product No:

IPB03N03LAG

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Batch:

-

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : 1000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 297

    $0.9595

    $284.9715

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 7027 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.7mOhm @ 55A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 100µA
Supplier Device Package PG-TO263-3-2
Drain to Source Voltage (Vdss) 25 V
Power Dissipation (Max) 150W (Tc)
Series OptiMOS™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk

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