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IPB067N08N3GATMA1

Infineon Technologies

Product No:

IPB067N08N3GATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 80V 80A D2PAK

Quantity:

Delivery:

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In Stock : 5571

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.5365

    $2.5365

  • 10

    $2.28095

    $22.8095

  • 100

    $1.833215

    $183.3215

  • 500

    $1.506168

    $753.084

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 3840 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 6.7mOhm @ 73A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 73µA
Supplier Device Package PG-TO263-3
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 136W (Tc)
Series OptiMOS™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number IPB067

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