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IPB06P001LATMA1

Infineon Technologies

Product No:

IPB06P001LATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Batch:

-

Datasheet:

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Description:

MOSFET P-CH 60V 100A TO263-3

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 8500 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 281 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 11mOhm @ 100A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2V @ 5.55mA
Supplier Device Package PG-TO263-3
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 300W (Tc)
Series OptiMOS™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number IPB06P

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