IPB08CN10N G
Infineon Technologies
Product No:
IPB08CN10N G
Manufacturer:
Package:
PG-TO263-3
Batch:
-
Datasheet:
Description:
MOSFET N-CH 100V 95A D2PAK
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 6660 pF @ 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 95A, 10V |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 4V @ 130µA |
| Supplier Device Package | PG-TO263-3 |
| Drain to Source Voltage (Vdss) | 100 V |
| Power Dissipation (Max) | 167W (Tc) |
| Series | OptiMOS™ |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 95A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | IPB08C |
Detail Info
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