Home / Single FETs, MOSFETs / IPB120N06N G

IPB120N06N G

Infineon Technologies

Product No:

IPB120N06N G

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Batch:

Datasheet:

Description:

MOSFET N-CH 60V 75A D2PAK

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

GOOD,as a globally renowned distributor of electronic components, sells a wide range of electronic components from the world's top brand manufacturers, ensuring that all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications, configurations, prices, supply cycles and payment terms of IPB120N06N G, please feel free to contact us at any time. To facilitate the processing of your inquiry, please include IPB120N06N G and the required quantity in the RFQ. GOOD can get the latest quotations of IPB120N06N G without registration. IPB120N06N G latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	62 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	11.7mOhm @ 75A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 94µA
Supplier Device Package	PG-TO263-3
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	158W (Tc)
Series	OptiMOS™
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IPB120N