IPB136N08N3GATMA1

Infineon Technologies

Product No:

IPB136N08N3GATMA1

Manufacturer:

Package:

PG-TO263-3

Batch:

Datasheet:

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : 4000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1730 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	13.9mOhm @ 45A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 33µA
Supplier Device Package	PG-TO263-3
Drain to Source Voltage (Vdss)	80 V
Power Dissipation (Max)	79W (Tc)
Series	OptiMOS™3
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	45A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Bulk