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IPB26CN10NGATMA1

Infineon Technologies

Product No:

IPB26CN10NGATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

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Datasheet:

Description:

MOSFET N-CH 100V 35A D2PAK

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2070 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	26mOhm @ 35A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 39µA
Supplier Device Package	PG-TO263-3
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	71W (Tc)
Series	OptiMOS™
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IPB26C