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IPB45N04S4L08ATMA1

Infineon Technologies

Product No:

IPB45N04S4L08ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

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Description:

MOSFET N-CH 40V 45A TO263-3-2

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Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	7.6mOhm @ 45A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.2V @ 17µA
Supplier Device Package	PG-TO263-3-2
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	45W (Tc)
Series	OptiMOS™
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	45A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	+20V, -16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	IPB45N