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IPB47N10S33ATMA1

Infineon Technologies

Product No:

IPB47N10S33ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

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Description:

MOSFET N-CH 100V 47A TO263-3

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	105 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	33mOhm @ 33A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 2mA
Supplier Device Package	PG-TO263-3-2
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	175W (Tc)
Series	SIPMOS®
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	47A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IPB47N