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IPB60R250CP

Infineon Technologies

Product No:

IPB60R250CP

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Batch:

Datasheet:

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : 41770

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

202

$1.4155

$285.931

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1200 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	250mOhm @ 7.8A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 520µA
Supplier Device Package	PG-TO263-3-2
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	104W (Tc)
Series	CoolMOS™
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk