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IPB65R190CFD7AATMA1

Infineon Technologies

Product No:

IPB65R190CFD7AATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

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Datasheet:

Description:

MOSFET N-CH 650V 14A TO263-3

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1291 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	190mOhm @ 6.4A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 320µA
Supplier Device Package	PG-TO263-3
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	77W (Tc)
Series	Automotive, AEC-Q101, CoolMOS™
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	14A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Package	Tape & Reel (TR)
Base Product Number	IPB65R190