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IPB65R660CFDAATMA1

Infineon Technologies

Product No:

IPB65R660CFDAATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Batch:

Datasheet:

Description:

MOSFET N-CH 650V 6A D2PAK

Quantity:

Delivery:

Payment:

In Stock : 2000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$2.508

$2.508
10

$2.25435

$22.5435
100

$1.81222

$181.222
500

$1.488878

$744.439

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Product Information

Parameter Info

User Guide

Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	543 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	660mOhm @ 3.2A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 200µA
Supplier Device Package	PG-TO263-3
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	62.5W (Tc)
Series	Automotive, AEC-Q101, CoolMOS™
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IPB65R660