Home / Single FETs, MOSFETs / IPB80N06S4L05ATMA2

IPB80N06S4L05ATMA2

Infineon Technologies

Product No:

IPB80N06S4L05ATMA2

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Batch:

Datasheet:

Description:

MOSFET_)40V,60V)

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IPB80N06S4L05ATMA2, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IPB80N06S4L05ATMA2 and the required quantity in your RFQ. IICSEMI provides the latest quote for IPB80N06S4L05ATMA2 without requiring registration. Latest information on IPB80N06S4L05ATMA2: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IPB80N06S4L05ATMA2 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	8180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	5.1mOhm @ 80A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 60µA
Supplier Device Package	PG-TO263-3-2
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	107W (Tc)
Series	Automotive, AEC-Q101, OptiMOS™
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk