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IPB80P03P4L04ATMA2

Infineon Technologies

Product No:

IPB80P03P4L04ATMA2

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Batch:

-

Datasheet:

-

Description:

MOSFET P-CH 30V 80A TO263-3

Quantity:

Delivery:

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In Stock : 7985

Minimum: 1 Multiples: 1

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Unit Price

Ext Price

  • 1

    $3.0305

    $3.0305

  • 10

    $2.54125

    $25.4125

  • 100

    $2.0558

    $205.58

  • 500

    $1.827344

    $913.672

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 11300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 4.4mOhm @ 80A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 253µA
Supplier Device Package PG-TO263-3-2
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 137W (Tc)
Series Automotive, AEC-Q101, OptiMOS®-P2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Mfr Infineon Technologies
Vgs (Max) +5V, -16V
Package Tape & Reel (TR)
Base Product Number IPB80P

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