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IPB90N06S4L04ATMA1

Infineon Technologies

Product No:

IPB90N06S4L04ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 60V 90A TO263-3

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 13000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3.4mOhm @ 90A, 10V
Product Status Discontinued at Digi-Key
Vgs(th) (Max) @ Id 2.2V @ 90µA
Supplier Device Package PG-TO263-3-2
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 150W (Tc)
Series OptiMOS™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±16V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number IPB90N

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