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IPD023N04NF2SATMA1

Infineon Technologies

Product No:

IPD023N04NF2SATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3

Batch:

Datasheet:

Description:

TRENCH <= 40V

Quantity:

Delivery:

Payment:

In Stock : 1940

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.235

$1.235
10

$1.0089

$10.089
100

$0.784605

$78.4605
500

$0.665057

$332.5285
1000

$0.541766

$541.766

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4800 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	102 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.3mOhm @ 70A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.4V @ 81µA
Supplier Device Package	PG-TO252-3
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	3W (Ta), 150W (Tc)
Series	StrongIRFET™2
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	27A (Ta), 143A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	IPD023