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IPD031N03LGATMA1

Infineon Technologies

Product No:

IPD031N03LGATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-11

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 30V 90A TO252-3

Quantity:

Delivery:

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Payment:

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In Stock : 5584

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.874

    $0.874

  • 10

    $0.7163

    $7.163

  • 100

    $0.627665

    $62.7665

  • 500

    $0.589494

    $294.747

  • 1000

    $0.58102

    $581.02

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 5300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3.1mOhm @ 30A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 250µA
Supplier Device Package PG-TO252-3-11
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 94W (Tc)
Series OptiMOS™
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number IPD031

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