Home / Single FETs, MOSFETs / IPD105N03LGATMA1

IPD105N03LGATMA1

Infineon Technologies

Product No:

IPD105N03LGATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-11

Batch:

Datasheet:

Description:

MOSFET N-CH 30V 35A TO252-3

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IPD105N03LGATMA1, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IPD105N03LGATMA1 and the required quantity in your RFQ. IICSEMI provides the latest quote for IPD105N03LGATMA1 without requiring registration. Latest information on IPD105N03LGATMA1: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IPD105N03LGATMA1 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	10.5mOhm @ 30A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.2V @ 250µA
Supplier Device Package	PG-TO252-3-11
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	38W (Tc)
Series	OptiMOS™
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	IPD105N