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IPD110N12N3GBUMA1

Infineon Technologies

Product No:

IPD110N12N3GBUMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3

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Description:

MOSFET N-CH 120V 75A TO252-3

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IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IPD110N12N3GBUMA1, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IPD110N12N3GBUMA1 and the required quantity in your RFQ. IICSEMI provides the latest quote for IPD110N12N3GBUMA1 without requiring registration. Latest information on IPD110N12N3GBUMA1: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IPD110N12N3GBUMA1 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4310 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs	65 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	11mOhm @ 75A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 83µA
Supplier Device Package	PG-TO252-3
Drain to Source Voltage (Vdss)	120 V
Power Dissipation (Max)	136W (Tc)
Series	OptiMOS™
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IPD110N