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IPD12CN10N

Infineon Technologies

Product No:

IPD12CN10N

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-313

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Datasheet:

Description:

N-CHANNEL POWER MOSFET

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4320 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	65 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	12.4mOhm @ 67A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 83µA
Supplier Device Package	PG-TO252-3-313
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	125W (Tc)
Series	OptiMOS™
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	67A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk