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IPD180N10N3GBTMA1

Infineon Technologies

Product No:

IPD180N10N3GBTMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3

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Description:

MOSFET N-CH 100V 43A TO252-3

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	18mOhm @ 33A, 10V
Product Status	Discontinued at Digi-Key
Vgs(th) (Max) @ Id	3.5V @ 33µA
Supplier Device Package	PG-TO252-3
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	71W (Tc)
Series	OptiMOS™
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	43A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	IPD180N