Home / Single FETs, MOSFETs / IPD250N06N3GBTMA1

IPD250N06N3GBTMA1

Infineon Technologies

Product No:

IPD250N06N3GBTMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3

Batch:

Datasheet:

Description:

MOSFET N-CH 60V 28A TO252-3

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IPD250N06N3GBTMA1, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IPD250N06N3GBTMA1 and the required quantity in your RFQ. IICSEMI provides the latest quote for IPD250N06N3GBTMA1 without requiring registration. Latest information on IPD250N06N3GBTMA1: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IPD250N06N3GBTMA1 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1200 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	25mOhm @ 28A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 11µA
Supplier Device Package	PG-TO252-3
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	36W (Tc)
Series	OptiMOS™
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	28A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IPD250N