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IPD50N06S4L08ATMA2

Infineon Technologies

Product No:

IPD50N06S4L08ATMA2

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-11

Batch:

Datasheet:

Description:

MOSFET N-CH 60V 50A TO252-31

Quantity:

Delivery:

Payment:

In Stock : 7373

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.2065

$1.2065
10

$1.08015

$10.8015
100

$0.842365

$84.2365
500

$0.695856

$347.928
1000

$0.549366

$549.366

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4780 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	64 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	7.8mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 35µA
Supplier Device Package	PG-TO252-3-11
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	71W (Tc)
Series	Automotive, AEC-Q101, OptiMOS™
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	IPD50