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IPD50R2K0CEBTMA1

Infineon Technologies

Product No:

IPD50R2K0CEBTMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3

Batch:

-

Datasheet:

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Description:

CONSUMER

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 124 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2Ohm @ 600mA, 13V
Product Status Obsolete
Vgs(th) (Max) @ Id 3.5V @ 50µA
Supplier Device Package PG-TO252-3
Drain to Source Voltage (Vdss) 500 V
Power Dissipation (Max) 33W (Tc)
Series CoolMOS™ CE
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 13V
Package Tape & Reel (TR)
Base Product Number IPD50R

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