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IPD50R650CEAUMA1

Infineon Technologies

Product No:

IPD50R650CEAUMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-344

Batch:

Datasheet:

Description:

MOSFET N-CH 500V 9A TO252-3

Quantity:

Delivery:

Payment:

In Stock : 1888

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.8075

$0.8075
10

$0.66405

$6.6405
100

$0.5168

$51.68
500

$0.438083

$219.0415
1000

$0.356858

$356.858

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	342 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	650mOhm @ 1.8A, 13V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 150µA
Supplier Device Package	PG-TO252-3-344
Drain to Source Voltage (Vdss)	500 V
Power Dissipation (Max)	69W (Tc)
Series	CoolMOS™ CE
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	13V
Package	Tape & Reel (TR)
Base Product Number	IPD50R650