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IPD60R2K1CEAUMA1

Infineon Technologies

Product No:

IPD60R2K1CEAUMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3

Batch:

Datasheet:

Description:

MOSFET N-CH 600V 2.3A TO252-3

Quantity:

Delivery:

Payment:

In Stock : 10816

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.57

$0.57
10

$0.5054

$5.054
100

$0.387695

$38.7695
500

$0.30647

$153.235
1000

$0.245176

$245.176

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Product Information

Parameter Info

User Guide

Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	140 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	6.7 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.1Ohm @ 760mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 60µA
Supplier Device Package	PG-TO252-3
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	38W (Tc)
Series	CoolMOS™ CE
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2.3A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IPD60R