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IPD65R420CFDAATMA1

Infineon Technologies

Product No:

IPD65R420CFDAATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3

Batch:

Datasheet:

Description:

MOSFET N-CH 650V 8.7A TO252-3

Quantity:

Delivery:

Payment:

In Stock : 2500

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$2.6125

$2.6125
10

$2.1926

$21.926
100

$1.773935

$177.3935
500

$1.57681

$788.405
1000

$1.35014

$1350.14

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Product Information

Parameter Info

User Guide

Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	870 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	32 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	420mOhm @ 3.4A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 345µA
Supplier Device Package	PG-TO252-3
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	83.3W (Tc)
Series	Automotive, AEC-Q101, CoolMOS™
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	8.7A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IPD65R420